Invention Grant
- Patent Title: Semiconductor light emitting element and manufacturing method thereof
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US12684109Application Date: 2010-01-07
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Publication No.: US08270447B2Publication Date: 2012-09-18
- Inventor: Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
- Applicant: Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Solaris Intellectual Property Group, PLLC
- Priority: JP2009-002793 20090108; JP2010-002399 20100107
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.
Public/Granted literature
- US20100232465A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-16
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