Invention Grant
- Patent Title: Data writing method and data storage device
- Patent Title (中): 数据写入方式和数据存储装置
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Application No.: US12783661Application Date: 2010-05-20
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Publication No.: US08271721B2Publication Date: 2012-09-18
- Inventor: Wei-Yi Hsiao
- Applicant: Wei-Yi Hsiao
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: Thomas|Kayden
- Priority: TW98144422A 20091223
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
The invention provides a data writing method for a flash memory. First, a write command, a write address, and write data are received from a host. When a total number of block pairs in the flash memory is equal to a threshold value, and execution of the write command increases the total number of block pairs, the write data is written to a data buffer block of the flash memory, and the write address is stored in an address storage table. A target block pair comprising a target mother block and a target child block is then selected from the block pairs for integration. The target mother block and the target child block are integrated into an integrated block during receiving intervals of a plurality of subsequent write commands. Finally, the write command is executed according to the write data stored in the data buffer block and the write address stored in the address storage table.
Public/Granted literature
- US20110153918A1 DATA WRITING METHOD AND DATA STORAGE DEVICE Public/Granted day:2011-06-23
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