Invention Grant
- Patent Title: Memory device with improved switching speed and data retention
- Patent Title (中): 具有改进的开关速度和数据保持的存储器件
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Application No.: US11078873Application Date: 2005-03-11
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Publication No.: US08274073B2Publication Date: 2012-09-25
- Inventor: Juri Krieger , Stuart Spitzer
- Applicant: Juri Krieger , Stuart Spitzer
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the passive layer and the second electrode. In undertaking an operation on the memory device, ions moves into within and from within the active layer, and the active layer is oriented so that the atoms of the active layer provide minimum obstruction to the movement of the ions into, within and from the active layer.
Public/Granted literature
- US20060202192A1 Memory device with improved switching speed and data retention Public/Granted day:2006-09-14
Information query
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