Invention Grant
- Patent Title: Isolation trench with rounded corners for BiCMOS process
- Patent Title (中): 用于BiCMOS工艺的带圆角的隔离槽
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Application No.: US12962159Application Date: 2010-12-07
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Publication No.: US08274131B2Publication Date: 2012-09-25
- Inventor: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- Applicant: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A semiconductor device comprising a first transistor device (130) on or in a semiconductor substrate (115) and a second transistor device (132) on or in the substrate. The device further comprises an insulating trench (200) located between the first transistor device and the second transistor device. At least one upper corner (610) of the insulating trench is a rounded corner in a lateral plane (620) of the substrate.
Public/Granted literature
- US20110073955A1 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS Public/Granted day:2011-03-31
Information query
IPC分类:
