Invention Grant
- Patent Title: Semiconductor patch antenna
- Patent Title (中): 半导体贴片天线
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Application No.: US12757506Application Date: 2010-04-09
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Publication No.: US08274136B2Publication Date: 2012-09-25
- Inventor: Sergey N. Makarov , Reinhold Ludwig , Francesca Scire-Scappuzzo , John McNeill
- Applicant: Sergey N. Makarov , Reinhold Ludwig , Francesca Scire-Scappuzzo , John McNeill
- Applicant Address: US MA Worcester
- Assignee: Worcester Polytechnic Institute
- Current Assignee: Worcester Polytechnic Institute
- Current Assignee Address: US MA Worcester
- Agency: Burns & Levinson LLP
- Agent Jacob N. Erlich; Orlando Lopez
- Main IPC: H01L29/868
- IPC: H01L29/868 ; H01L21/329 ; H01L21/02
Abstract:
A semiconductor patch antenna for microwave radiation having a wide pin-junction or pn-junction with the depletion region or embodiments having a separating buried oxide (SiO2) layer between p- and n-doped regions as the natural resonator volume. Embodiments that do not include a metal ground plane and/or a metal patch are disclosed.
Public/Granted literature
- US20100258919A1 SEMICONDUCTOR PATCH ANTENNA Public/Granted day:2010-10-14
Information query
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