Invention Grant
- Patent Title: Semiconductor device having a contact hole extending from an upper surface of an insulating film and reaching one of a plurality of impurity regions constituting a transistor and method of manufacturing the same
- Patent Title (中): 具有从绝缘膜的上表面延伸到达构成晶体管的多个杂质区域中的一个的接触孔的半导体器件及其制造方法
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Application No.: US11600210Application Date: 2006-11-16
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Publication No.: US08274152B2Publication Date: 2012-09-25
- Inventor: Kouichi Nagai
- Applicant: Kouichi Nagai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-181953 20060630
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A transistor is formed on a semiconductor substrate, and thereafter a first insulating film is formed. Subsequently, a ferroelectric capacitor is formed on the first insulating film, and then a second insulating film is formed on the ferroelectric capacitor. Thereafter, the upper surface of the second insulating film is planarized. Subsequently, a contact hole which reaches one of impurity regions of the transistor is formed, and thus a plug is formed by embedding a conductor in the contact hole. Thereafter, a hydrogen barrier layer is formed of aluminum oxide or the like. Then, a third insulating film is formed on the hydrogen barrier layer. Subsequently, contact holes which are connected to the ferroelectric capacitor and the plug are formed. Thereafter, a conductor is embedded in the contact holes, and thus interconnections are formed.
Public/Granted literature
- US20080001291A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-01-03
Information query
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