Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12458278Application Date: 2009-07-07
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Publication No.: US08274166B2Publication Date: 2012-09-25
- Inventor: Hirokazu Shimada
- Applicant: Hirokazu Shimada
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-179562 20080709
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor device includes a substrate; an alignment mark formed on the substrate and composed of a metal film; a cover insulating film formed on the alignment mark and covering an entire surface of the alignment mark; and a polyimide film formed on the cover insulating film, and having an opening, which is opened on the alignment mark and has an end face aligning with an end face of the alignment mark, in plan view.
Public/Granted literature
- US20100007035A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-01-14
Information query
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