Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13224360Application Date: 2011-09-02
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Publication No.: US08274323B2Publication Date: 2012-09-25
- Inventor: Chikako Matsumoto , Kiyoshi Kato
- Applicant: Chikako Matsumoto , Kiyoshi Kato
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-354427 20061228
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A semiconductor device includes rectifying elements which are connected in series and has a rectifying function from a first input terminal portion to an output terminal portion; a first wiring and a second wiring, which are connected to a second input terminal portion; and a boosting circuit including a plurality of capacitor elements each having a first electrode, an insulating film, and a second electrode and storing a boosted potential. The plurality of capacitor elements includes a capacitor element in which the first electrode and the second electrode are formed using conductive films, and a capacitor element in which at least the second electrode is formed using a semiconductor film. In the plurality of capacitor elements, at least a capacitor element in a first stage is a capacitor element in which the first electrode and the second electrode are formed using conductive films.
Public/Granted literature
- US20120081935A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-04-05
Information query
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