Invention Grant
- Patent Title: Inductor devices
- Patent Title (中): 电感器件
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Application No.: US13009432Application Date: 2011-01-19
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Publication No.: US08274352B2Publication Date: 2012-09-25
- Inventor: Chang-Lin Wei , Kuo-Chiang Chin , Cheng-Hua Tsai , Chin-Sun Shyu , Chang-Sheng Chen
- Applicant: Chang-Lin Wei , Kuo-Chiang Chin , Cheng-Hua Tsai , Chin-Sun Shyu , Chang-Sheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H01F17/06
- IPC: H01F17/06

Abstract:
An inductor device comprising a first conductive pattern on a first layer of a substrate, a second conductive pattern on a second layer of the substrate, and a first region between the first layer and the second layer through which at least one hole is coupled between the first dielectric layer and the second dielectric layer, wherein a magnetic field induced by at least one of the first conductive pattern or the second conductive pattern at the first region is more intensive than that induced by at least one of the first conductive pattern or the second conductive pattern at a second region between the first conductive layer and the second conductive layer.
Public/Granted literature
- US20110169597A1 INDUCTOR DEVICES Public/Granted day:2011-07-14
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