Invention Grant
- Patent Title: Magnetic recording element including a thin film layer with changeable magnetization direction
- Patent Title (中): 磁记录元件包括具有可变磁化方向的薄膜层
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Application No.: US11783011Application Date: 2007-04-05
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Publication No.: US08274766B2Publication Date: 2012-09-25
- Inventor: Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Hitoshi Iwasaki
- Applicant: Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Hitoshi Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JPP2006-125856 20060428
- Main IPC: G11B5/127
- IPC: G11B5/127
Abstract:
A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and having a substantially fixed magnetization direction.
Public/Granted literature
- US20070253122A1 Magneto-resistive element and method of manufacturing the same Public/Granted day:2007-11-01
Information query
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