Invention Grant
- Patent Title: Semiconductor memory apparatus and method of testing the same
- Patent Title (中): 半导体存储器及其测试方法
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Application No.: US12494511Application Date: 2009-06-30
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Publication No.: US08274852B2Publication Date: 2012-09-25
- Inventor: Young Soo Kim
- Applicant: Young Soo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0009357 20090205
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00

Abstract:
A semiconductor memory apparatus includes a sense amplifier coupled to a plurality of bit lines, a switching unit configured to cause the plurality of bit lines to be coupled to a first node in response to a switching signal, a mode selecting unit configured to selectively couple the first node to a pad or a ground terminal in response to a mode selection signal and a testing unit configured to supply current to the pad during a test mode.
Public/Granted literature
- US20100195377A1 SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF TESTING THE SAME Public/Granted day:2010-08-05
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