Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor manufacturing apparatus
- Patent Title (中): 半导体装置及半导体制造装置的制造方法
-
Application No.: US13008443Application Date: 2011-01-18
-
Publication No.: US08276537B2Publication Date: 2012-10-02
- Inventor: Yukio Katamura , Yasuo Tane , Atsushi Yoshimura , Fumihiro Iwami
- Applicant: Yukio Katamura , Yasuo Tane , Atsushi Yoshimura , Fumihiro Iwami
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-100311 20100423
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.
Public/Granted literature
- US20110263131A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2011-10-27
Information query
IPC分类:
