Invention Grant
- Patent Title: Wafer polishing method and wafer produced thereby
- Patent Title (中): 晶圆抛光方法和由此制造的晶片
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Application No.: US12481722Application Date: 2009-06-10
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Publication No.: US08277283B2Publication Date: 2012-10-02
- Inventor: Hiroaki Sato
- Applicant: Hiroaki Sato
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-155763 20080613
- Main IPC: B24B1/00
- IPC: B24B1/00
Abstract:
A wafer is polished by a method comprising a slicing step of cutting out a wafer from a single crystal ingot and a step of polishing at least one of both surfaces and an end face of the wafer, wherein the at least one surface and end face of the wafer are simultaneously subjected to a mirror polishing.
Public/Granted literature
- US20090311522A1 WAFER POLISHING METHOD AND WAFER PRODUCED THEREBY Public/Granted day:2009-12-17
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