Invention Grant
- Patent Title: Plasma processing method
- Patent Title (中): 等离子体处理方法
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Application No.: US13019131Application Date: 2011-02-01
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Publication No.: US08277563B2Publication Date: 2012-10-02
- Inventor: Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
- Applicant: Masunori Ishihara , Masamichi Sakaguchi , Yasuhiro Nishimori , Yutaka Kudou , Satoshi Une
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-058664 20070308
- Main IPC: B08B7/00
- IPC: B08B7/00

Abstract:
The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
Public/Granted literature
- US20110120495A1 PLASMA PROCESSING METHOD Public/Granted day:2011-05-26
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