Invention Grant
US08277600B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
有权
高温接合组合物,基板接合方法和3-D半导体器件
- Patent Title: High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
- Patent Title (中): 高温接合组合物,基板接合方法和3-D半导体器件
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Application No.: US12541594Application Date: 2009-08-14
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Publication No.: US08277600B2Publication Date: 2012-10-02
- Inventor: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano
- Applicant: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-209197 20080815
- Main IPC: C09J7/02
- IPC: C09J7/02 ; B32B9/04 ; C08L83/00 ; C08L83/04

Abstract:
A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.
Public/Granted literature
- US20100040895A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE Public/Granted day:2010-02-18
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