Invention Grant
- Patent Title: Antenna for plasma processor and apparatus
- Patent Title (中): 等离子体处理器和设备天线
-
Application No.: US13020170Application Date: 2011-02-03
-
Publication No.: US08277604B2Publication Date: 2012-10-02
- Inventor: Arthur M. Howald , Andras Kuthi
- Applicant: Arthur M. Howald , Andras Kuthi
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306

Abstract:
An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.
Public/Granted literature
- US20110120653A1 ANTENNA FOR PLASMA PROCESSOR AND APPARATUS Public/Granted day:2011-05-26
Information query
IPC分类: