Invention Grant
- Patent Title: Apparatus for electrochemical plating semiconductor wafers
- Patent Title (中): 电化学电镀半导体晶片的装置
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Application No.: US13176839Application Date: 2011-07-06
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Publication No.: US08277619B2Publication Date: 2012-10-02
- Inventor: Chung-Liang Chang , Shau-Lin Shue
- Applicant: Chung-Liang Chang , Shau-Lin Shue
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C25B9/04
- IPC: C25B9/04 ; C25B9/02 ; C25D17/04 ; C25D17/06

Abstract:
An electroplating apparatus for depositing a conductive material on a semiconductor wafer includes a vessel for holding an electroplating bath, a support for holding a semiconductor wafer within the vessel and beneath a surface of the bath; first and second electrodes within the vessel, between which an electrical current may flow causing conductive material to be electrolytically deposited onto the wafer, a third electrode disposed outside of the bath for applying a static electric charge to the wafer, and an electrical power supply coupled with the third electrode.
Public/Granted literature
- US20110259734A1 Apparatus for Electrochemical Plating Semiconductor Wafers Public/Granted day:2011-10-27
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