Invention Grant
- Patent Title: Plasma process with photoresist mask pretreatment
- Patent Title (中): 具有光刻胶掩模预处理的等离子体工艺
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Application No.: US12120059Application Date: 2008-05-13
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Publication No.: US08277670B2Publication Date: 2012-10-02
- Inventor: Dongho Heo , Ji Soo Kim
- Applicant: Dongho Heo , Ji Soo Kim
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205
Abstract:
A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.
Public/Granted literature
- US20090286400A1 PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT Public/Granted day:2009-11-19
Information query
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