Invention Grant
- Patent Title: Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
- Patent Title (中): 在半绝缘碳化硅晶片上生产无损伤表面的抛光工艺
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Application No.: US11856810Application Date: 2007-09-18
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Publication No.: US08277671B2Publication Date: 2012-10-02
- Inventor: William J. Everson , David Snyder , Richard Gamble , Volker D. Heydemann
- Applicant: William J. Everson , David Snyder , Richard Gamble , Volker D. Heydemann
- Applicant Address: US PA University Park
- Assignee: The Penn State Research Foundation
- Current Assignee: The Penn State Research Foundation
- Current Assignee Address: US PA University Park
- Agency: Gifford, Krass, Sprinkle, Anderson & Citkowski, P.C.
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; H01L21/302 ; H01L21/461
Abstract:
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).
Public/Granted literature
- US20090215268A1 POLISHING PROCESS FOR PRODUCING DAMAGE FREE SURFACES ON SEMI-INSULATING SILICON CARBIDE WAFERS Public/Granted day:2009-08-27
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