Invention Grant
- Patent Title: Film formation method and film formation apparatus
- Patent Title (中): 成膜方法和成膜装置
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Application No.: US12443487Application Date: 2008-02-19
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Publication No.: US08277889B2Publication Date: 2012-10-02
- Inventor: Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Osamu Yokoyama , Satoshi Taga
- Applicant: Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Osamu Yokoyama , Satoshi Taga
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-085022 20070328
- International Application: PCT/JP2008/052757 WO 20080219
- International Announcement: WO2008/117590 WO 20081002
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/16 ; C23C16/46

Abstract:
A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.
Public/Granted literature
- US20100075035A1 FILM FORMATION METHOD AND FILM FORMATION APPARATUS Public/Granted day:2010-03-25
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