Invention Grant
- Patent Title: Method of processing a substrate
- Patent Title (中): 处理基板的方法
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Application No.: US12469776Application Date: 2009-05-21
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Publication No.: US08277906B2Publication Date: 2012-10-02
- Inventor: Yoon-jae Kim , Yong-jin Kim , Ken Tokashiki , Keun-hee Bai
- Applicant: Yoon-jae Kim , Yong-jin Kim , Ken Tokashiki , Keun-hee Bai
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2008-0088915 20080909
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.
Public/Granted literature
- US20100062613A1 METHOD OF PROCESSING A SUBSTRATE Public/Granted day:2010-03-11
Information query
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