Invention Grant
- Patent Title: Photomask and pattern formation method using the same
- Patent Title (中): 光掩模和图案形成方法使用它
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Application No.: US13178256Application Date: 2011-07-07
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Publication No.: US08278014B2Publication Date: 2012-10-02
- Inventor: Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
- Applicant: Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-227640 20070903
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F9/00 ; G03F7/00
Abstract:
A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
Public/Granted literature
- US20110262849A1 PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME Public/Granted day:2011-10-27
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