Invention Grant
- Patent Title: Group-III nitride epitaxial layer on silicon substrate
- Patent Title (中): 硅衬底上的III族氮化物外延层
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Application No.: US13225164Application Date: 2011-09-02
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Publication No.: US08278125B2Publication Date: 2012-10-02
- Inventor: Ding-Yuan Chen , Chen-Hua Yu
- Applicant: Ding-Yuan Chen , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern.
Public/Granted literature
- US20110318860A1 Group-III Nitride Epitaxial Layer on Silicon Substrate Public/Granted day:2011-12-29
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