Invention Grant
US08278128B2 Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
失效
通过晶片离轴切割增强氮化物发光二极管的光学偏振
- Patent Title: Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
- Patent Title (中): 通过晶片离轴切割增强氮化物发光二极管的光学偏振
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Application No.: US12364272Application Date: 2009-02-02
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Publication No.: US08278128B2Publication Date: 2012-10-02
- Inventor: Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- Applicant: Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0° and 27°.
Public/Granted literature
- US20100052008A1 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT Public/Granted day:2010-03-04
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