Invention Grant
US08278135B2 Highly pure film formation method for light emitting device using gas from evaporated electroluminescent source
有权
用于从蒸发的电致发光源使用气体的发光器件的高纯度成膜方法
- Patent Title: Highly pure film formation method for light emitting device using gas from evaporated electroluminescent source
- Patent Title (中): 用于从蒸发的电致发光源使用气体的发光器件的高纯度成膜方法
-
Application No.: US11856774Application Date: 2007-09-18
-
Publication No.: US08278135B2Publication Date: 2012-10-02
- Inventor: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Nishi
- Applicant: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Nishi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-326278 20001026
- Main IPC: H01J9/233
- IPC: H01J9/233
Abstract:
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.
Public/Granted literature
- US20080014822A1 Film Formation Apparatus and Film Formation Method Public/Granted day:2008-01-17
Information query
