Invention Grant
- Patent Title: Semiconductor device, method for producing the same, sensor and electro-optical device
- Patent Title (中): 半导体装置及其制造方法，传感器和电光装置
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Application No.: US12474931Application Date: 2009-05-29
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Publication No.: US08278136B2Publication Date: 2012-10-02
- Inventor: Atsushi Tanaka , Kenichi Umeda , Kohei Higashi , Maki Nangu
- Applicant: Atsushi Tanaka , Kenichi Umeda , Kohei Higashi , Maki Nangu
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-143255 20080530
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L21/00 ; H01L21/44 ; B05D5/12 ; C23C14/30
Abstract:
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
Public/Granted literature
- US20090294765A1 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, SENSOR AND ELECTRO-OPTICAL DEVICE Public/Granted day:2009-12-03
Information query
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