Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12565747Application Date: 2009-09-23
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Publication No.: US08278147B2Publication Date: 2012-10-02
- Inventor: Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
- Applicant: Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2001-172503 20010607
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).
Public/Granted literature
- US20100015760A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-01-21
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