Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12768205Application Date: 2010-04-27
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Publication No.: US08278162B2Publication Date: 2012-10-02
- Inventor: Kengo Akimoto , Daisuke Kawae
- Applicant: Kengo Akimoto , Daisuke Kawae
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-111693 20090501
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
Public/Granted literature
- US20100279474A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-11-04
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