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US08278164B2 Semiconductor structures and methods of manufacturing the same 有权
半导体结构及其制造方法

Semiconductor structures and methods of manufacturing the same
Abstract:
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.
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