Invention Grant
- Patent Title: Semiconductor structures and methods of manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12700059Application Date: 2010-02-04
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Publication No.: US08278164B2Publication Date: 2012-10-02
- Inventor: Xi Li , Viorel C. Ontalus
- Applicant: Xi Li , Viorel C. Ontalus
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joe Petrokaitis
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.
Public/Granted literature
- US20110186938A1 SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2011-08-04
Information query
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