Invention Grant
US08278197B2 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
有权
方法可以直接在扩展垫片下方定制峰值电场的位置,以提高快速移位装置的可编程性
- Patent Title: Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
- Patent Title (中): 方法可以直接在扩展垫片下方定制峰值电场的位置,以提高快速移位装置的可编程性
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Application No.: US12130460Application Date: 2008-05-30
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Publication No.: US08278197B2Publication Date: 2012-10-02
- Inventor: Matthew J. Breitwisch , Roger W. Cheek , Jeffrey B. Johnson , Chung H. Lam , Beth A. Rainey , Michael J. Zierak
- Applicant: Matthew J. Breitwisch , Roger W. Cheek , Jeffrey B. Johnson , Chung H. Lam , Beth A. Rainey , Michael J. Zierak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/265
- IPC: H01L21/265

Abstract:
The invention provides a method to enhance the programmability of a prompt-shift device, which reduces the programming time to sub-millisecond times, by altering the extension and halo implants, instead of simply omitting the same from one side of the device as is the case in the prior art prompt-shift devices. The invention includes an embodiment in which no additional masks are employed, or one additional mask is employed. The altered extension implant is performed at a reduced ion dose as compared to a conventional extension implant process, while the altered halo implant is performed at a higher ion dose than a conventional halo implant. The altered halo/extension implant shifts the peak of the electrical field to under an extension dielectric spacer.
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