A method of producing a Schottky diode includes the steps of: forming a resist layer on the semiconductor substrate; performing a first exposure process on the resist layer; performing a first developing process for developing the resist layer to form a first Schottky diode having an excess region; performing a first cleaning process; performing a second exposure process on the first Schottky diode; performing a second developing process on the first Schottky diode to remove the excess region from the first Schottky diode so that a second Schottky diode corresponding to the specific Schottky diode is formed; and performing a second cleaning process.