Methods for fabricating control gates in non-volatile storage are disclosed. When forming stacks for floating gate memory cells and transistor control gates, a sacrificial material may be formed at the top of the stacks. After insulation is formed between the stacks, the sacrificial material may be removed to reveal openings. In some embodiments, cutouts are then formed in regions in which control gates of transistors are to be formed. Metal is then formed in the openings, which may include the cutout regions. Therefore, floating gate memory cells having at least partially metal control gates and transistors having at least partially metal control gates may be formed in the same process. A barrier layer may be formed prior to depositing the metal in order to prevent silicidation of polysilicon in the control gates.