Invention Grant
- Patent Title: Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
- Patent Title (中): 形成布线和制造薄膜晶体管和液滴放电方法的方法
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Application No.: US13012055Application Date: 2011-01-24
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Publication No.: US08278204B2Publication Date: 2012-10-02
- Inventor: Shinji Maekawa , Koji Muranaka
- Applicant: Shinji Maekawa , Koji Muranaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2003-368030 20031028
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
Public/Granted literature
- US20110177689A1 Methods for Forming Wiring and Manufacturing Thin Film Transistor and Droplet Discharging Method Public/Granted day:2011-07-21
Information query
IPC分类:
