Semiconductor device and method for manufacturing the same

Invention Grant

US08278205B2 Semiconductor device and method for manufacturing the same 有权

Title translation: 半导体装置及其制造方法

Please log in to see more content

Patent Title: Semiconductor device and method for manufacturing the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US12380368

Application Date: 2009-02-25
Publication No.: US08278205B2

Publication Date: 2012-10-02
Inventor: Takaaki Matsuoka
Applicant: Takaaki Matsuoka
Applicant Address: JP Minato-ku
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Minato-ku
Agency: Masuvalley and Partners
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device and method for manufacturing the same

Abstract:

The present invention is a method for manufacturing a semiconductor device having a conductor and an insulating film on a substrate, the method including the steps of forming the conductor on the substrate, forming the insulating film on the conductor, removing the insulating film on the conductor, and blowing an organosilane gas and a hydrogen gas to reduce an oxidized region on the conductor, wherein the oxidized region on the conductor is formed when the insulating film is removed.

Abstract(Chinese):

本发明是一种在衬底上制造具有导体和绝缘膜的半导体器件的方法，该方法包括以下步骤：在衬底上形成导体，在导体上形成绝缘膜，去除导体上的绝缘膜并吹入有机硅烷气体和氢气以还原导体上的氧化区域，其中当除去绝缘膜时，形成导体上的氧化区域。

Public/Granted literature

US20090230558A1 Semiconductor device and method for manufacturing the same Public/Granted day:2009-09-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）