Semiconductor device and method of producing the same

Invention Grant

US08278217B2 Semiconductor device and method of producing the same 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of producing the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US11250409

Application Date: 2005-10-17
Publication No.: US08278217B2

Publication Date: 2012-10-02
Inventor: Yoshihiko Imanaka , Jun Akedo
Applicant: Yoshihiko Imanaka , Jun Akedo
Applicant Address: JP Kawasaki JP Tokyo
Assignee: Fujitsu Limited,National Institute of Advanced Industrial Science and Technology
Current Assignee: Fujitsu Limited,National Institute of Advanced Industrial Science and Technology
Current Assignee Address: JP Kawasaki JP Tokyo
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2004-308620 20041022
Main IPC: H01L21/311
IPC: H01L21/311

Semiconductor device and method of producing the same

Abstract:

A semiconductor device includes a semiconductor chip having a surface provided with connecting electrodes, a stacked structure made up of alternately stacked dielectric and wiring layers and provided on the surface of the semiconductor chip, a passive element provided in the stacked structure and electrically connected to the wiring layers; and external electrodes for external electrical connection provided on the stacked structure and electrically connected to the connecting electrodes via the wiring layers. The passive element has at least one layer selected from a group consisting of a capacitor dielectric layer, a resistor layer and a conductor layer that are formed by spraying an aerosol particulate material.

Abstract(Chinese):

半导体器件包括具有连接电极的表面的半导体芯片，由交替堆叠的电介质层和布线层构成并且设置在半导体芯片的表面上的堆叠结构，设置在层叠结构中并电连接到接线层; 以及外部电连接的外部电极，设置在层叠结构上并通过布线层与连接电极电连接。无源元件具有选自由通过喷雾气溶胶颗粒材料形成的电容器介电层，电阻层和导体层组成的组中的至少一个层。

Public/Granted literature

US20060087029A1 Semiconductor device and method of producing the same Public/Granted day:2006-04-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀