Invention Grant
- Patent Title: Method for producing trialkyl gallium
- Patent Title (中): 制备三烷基镓的方法
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Application No.: US12571588Application Date: 2009-10-01
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Publication No.: US08278470B2Publication Date: 2012-10-02
- Inventor: Hisayoshi Yanagihara , Atau Ioku , Takatoshi Mori , Hikari Mitsui
- Applicant: Hisayoshi Yanagihara , Atau Ioku , Takatoshi Mori , Hikari Mitsui
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2005-85047 20050323; JP2005-85048 20050323; JP2005-85050 20050323; JP2005-85052 20050323; JP2005-85053 20050323
- Main IPC: C07F5/00
- IPC: C07F5/00
Abstract:
The present invention provides a method for producing a trialkyl gallium comprising the steps of reacting gallium, magnesium, and an alkyl halide in an ether, and diluting during the reaction the reaction system with an ether; a method for producing a trialkyl gallium comprising the steps of heating in a vacuum a mixture of magnesium and molten gallium, and reacting the mixture with an alkyl halide in a solvent; and a method for producing a trialkyl gallium comprising the step of reacting an alkyl metal with an alkylgallium halide compound represented by the formula Ga2RmX6−m wherein R is a methyl or ethyl group, X is a halogen atom, and m is an integer from 1 to 5.
Public/Granted literature
- US20100013055A1 METHOD FOR PRODUCING TRIALKYL GALLIUM Public/Granted day:2010-01-21
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