A data storage device including a stack of layers is provided. The stack of layers includes at least one memory layer able to effect a storage of data in a plurality of portions of the memory layer by a modification of at least one physico-chemical property of the material of the portions of the memory layer under the effect of an electric current passing through the portions of the memory layer. A plurality of photoconductive columns disposed in the stack of layers passes through each layer in this stack. Each of the portions of the memory layer surrounds one of the photoconductive columns.