Invention Grant
US08278640B2 Resistive random access memory devices and resistive random access memory arrays having the same
有权
电阻随机存取存储器件和具有相同功能的电阻随机存取存储器阵列
- Patent Title: Resistive random access memory devices and resistive random access memory arrays having the same
- Patent Title (中): 电阻随机存取存储器件和具有相同功能的电阻随机存取存储器阵列
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Application No.: US12805783Application Date: 2010-08-19
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Publication No.: US08278640B2Publication Date: 2012-10-02
- Inventor: Dong-soo Lee , Chang-bum Lee , Chang-jung Kim
- Applicant: Dong-soo Lee , Chang-bum Lee , Chang-jung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0130033 20091223
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices.
Public/Granted literature
- US20110147696A1 Resistive random access memory devices and resistive random access memory arrays having the same Public/Granted day:2011-06-23
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