Invention Grant
US08278641B2 Fabricating current-confining structures in phase change memory switch cells
有权
在相变存储器开关单元中制造电流限制结构
- Patent Title: Fabricating current-confining structures in phase change memory switch cells
- Patent Title (中): 在相变存储器开关单元中制造电流限制结构
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Application No.: US12646267Application Date: 2009-12-23
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Publication No.: US08278641B2Publication Date: 2012-10-02
- Inventor: Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
- Applicant: Jong-Won Sean Lee , DerChang Kau , Gianpaolo Spadini
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Cool Patent, P.C.
- Agent Joseph P. Curtin
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
Public/Granted literature
- US20110147695A1 FABRICATING CURRENT-CONFINING STRUCTURES IN PHASE CHANGE MEMORY SWITCH CELLS Public/Granted day:2011-06-23
Information query
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