Invention Grant
- Patent Title: Switching device and nonvolatile memory device
- Patent Title (中): 开关器件和非易失性存储器件
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Application No.: US12710942Application Date: 2010-02-23
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Publication No.: US08278644B2Publication Date: 2012-10-02
- Inventor: Shosuke Fujii , Koichi Muraoka
- Applicant: Shosuke Fujii , Koichi Muraoka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-040924 20090224
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp2-bonded carbon and sp3-bonded carbon of the first layer is changeable by a voltage applied between the first layer and the third electrode.
Public/Granted literature
- US20100213435A1 SWITCHING DEVICE AND NONVOLATILE MEMORY DEVICE Public/Granted day:2010-08-26
Information query
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