The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).