Invention Grant
- Patent Title: Semiconductor light-emitting device and fabrication method thereof
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US11727378Application Date: 2007-03-26
-
Publication No.: US08278672B2Publication Date: 2012-10-02
- Inventor: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
- Applicant: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW95110538A 20060327
- Main IPC: H01L33/22
- IPC: H01L33/22
Abstract:
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
Public/Granted literature
- US20070221929A1 Semiconductor light-emitting device and fabrication method thereof Public/Granted day:2007-09-27
Information query
IPC分类:
