Invention Grant
- Patent Title: LED device with embedded top electrode
- Patent Title (中): 带嵌入式顶部电极的LED器件
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Application No.: US12235269Application Date: 2008-09-22
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Publication No.: US08278679B2Publication Date: 2012-10-02
- Inventor: Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
- Applicant: Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
- Applicant Address: TW Hsin-Chu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.
Public/Granted literature
- US20090267105A1 LED Device with Embedded Top Electrode Public/Granted day:2009-10-29
Information query
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