Invention Grant
- Patent Title: Low power memory device with JFET device structures
- Patent Title (中): 具有JFET器件结构的低功耗存储器件
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Application No.: US12333067Application Date: 2008-12-11
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Publication No.: US08278691B2Publication Date: 2012-10-02
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: H01L29/80
- IPC: H01L29/80

Abstract:
There is provided a low power memory device with JFET device structures. Specifically, a low power memory device is provided that includes a plurality memory cells having a memory element and a JFET access device electrically coupled to the memory element. The memory cells may be isolated using diffusion based isolation.
Public/Granted literature
- US20100148225A1 LOW POWER MEMORY DEVICE WITH JFET DEVICE STRUCTURES Public/Granted day:2010-06-17
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