Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12425077Application Date: 2009-04-16
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Publication No.: US08278696B2Publication Date: 2012-10-02
- Inventor: Yoshio Ozawa , Ryota Fujitsuka
- Applicant: Yoshio Ozawa , Ryota Fujitsuka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-108048 20080417
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A semiconductor device includes a tunnel insulating film formed on a semiconductor substrate, a charge storage insulating film formed on the tunnel insulating film and including at least two separated low oxygen concentration portions and a high oxygen concentration portion positioned between the adjacent low oxygen concentration portions and having a higher oxygen concentration than the low oxygen concentration portions, a charge block insulating film formed on the charge storage insulating film, and control gate electrodes formed on the charge block insulating film and above the low oxygen concentration portions.
Public/Granted literature
- US20090261400A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-10-22
Information query
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