Invention Grant
- Patent Title: Field effect transistors having a double gate structure
- Patent Title (中): 具有双栅极结构的场效应晶体管
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Application No.: US12830048Application Date: 2010-07-02
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Publication No.: US08278707B2Publication Date: 2012-10-02
- Inventor: Rodger Fehlhaber , Helmut Tews
- Applicant: Rodger Fehlhaber , Helmut Tews
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE10348007 20031015
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A field effect transistor includes two channel connection regions, a control region with at least two control sections, an active region that is formed as a projection of a mono crystalline substrate disposed between the channel connection regions and between two control region sections, and insulating regions that are electrically insulating and are disposed between the control region sections and the active region. The projection is isolated from the substrate at a base by an insulating material that is electrically insulating. The insulating material ends laterally at the projection in the mono crystalline substrate.
Public/Granted literature
- US20100264472A1 PATTERNING METHOD, AND FIELD EFFECT TRANSISTORS Public/Granted day:2010-10-21
Information query
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