Invention Grant
- Patent Title: Guard ring integrated LDMOS
- Patent Title (中): 保护环集成LDMOS
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Application No.: US12842660Application Date: 2010-07-23
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Publication No.: US08278710B2Publication Date: 2012-10-02
- Inventor: Vishnu K. Khemka , Stephen J. Cosentino , Tahir A. Khan , Adolfo C. Reyes , Ronghua Zhu
- Applicant: Vishnu K. Khemka , Stephen J. Cosentino , Tahir A. Khan , Adolfo C. Reyes , Ronghua Zhu
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Hamilton & Terrile, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
An LDMOSFET transistor (100) is provided which includes a substrate (101), an epitaxial drift region (104) in which a drain region (116) is formed, a first well region (107) in which a source region (112) is formed, a gate electrode (120) formed adjacent to the source region (112) to define a first channel region (14), and a grounded substrate injection suppression guard structure that includes a patterned buried layer (102) in ohmic contact with an isolation well region (103) formed in a predetermined upper region of the substrate so as to be spaced apart from the first well region (107) and from the drain region (116), where the buried layer (102) is disposed below the first well region (107) but not below the drain region (116).
Public/Granted literature
- US20120018804A1 Guard Ring Integrated LDMOS Public/Granted day:2012-01-26
Information query
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