Invention Grant
- Patent Title: Power MOSFET integration
- Patent Title (中): 功率MOSFET集成
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Application No.: US12399276Application Date: 2009-03-06
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Publication No.: US08278712B2Publication Date: 2012-10-02
- Inventor: Jungcheng Kao , Yanjun Li
- Applicant: Jungcheng Kao , Yanjun Li
- Applicant Address: US CA Santa Clara
- Assignee: O2Micro Inc.
- Current Assignee: O2Micro Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A cellular transistor includes an N-type heavily doped (N+) buried layer (NBL), an N-well connected to the NBL, an N+ layer connected to the N-well and multiple drains. The N-well is formed after formation of the NBL. The N+ layer is formed after formation of the N-well. The multiple drains are connected to the NBL via the N-well and the N+ layer.
Public/Granted literature
- US20090167662A1 POWER MOSFET INTEGRATION Public/Granted day:2009-07-02
Information query
IPC分类:
