Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12729558Application Date: 2010-03-23
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Publication No.: US08278734B2Publication Date: 2012-10-02
- Inventor: Ichiro Mihara
- Applicant: Ichiro Mihara
- Applicant Address: JP Ome-shi
- Assignee: Teramikros, Inc.
- Current Assignee: Teramikros, Inc.
- Current Assignee Address: JP Ome-shi
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2009-075277 20090325
- Main IPC: H01L27/08
- IPC: H01L27/08
Abstract:
Disclosed is a semiconductor device comprising: a semiconductor substrate in which an integrated circuit is formed; a first resin film provided over the semiconductor substrate; a second resin film provided over an upper surface of the first resin film except at least a peripheral portion of the first resin film; and a thin film inductor provided over the second resin film.
Public/Granted literature
- US20100244188A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-30
Information query
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