Invention Grant
- Patent Title: Method of producing semiconductor device and semiconductor device
- Patent Title (中): 半导体器件和半导体器件的制造方法
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Application No.: US11884536Application Date: 2006-02-08
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Publication No.: US08278738B2Publication Date: 2012-10-02
- Inventor: Hiroaki Nakashima
- Applicant: Hiroaki Nakashima
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2005-040556 20050217
- International Application: PCT/JP2006/002177 WO 20060208
- International Announcement: WO2006/087957 WO 20060824
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A method of producing a semiconductor device which can reliably perform conductor filling to form a through hole electrode by a simple method is provided. A method of producing a semiconductor device of the present invention includes the steps of thinning a substrate from its back side in a state in which a first supporting body is attached to the front side of the substrate, removing the first supporting body from the substrate and attaching a second supporting body having an opening to the back side of the substrate, forming a through hole communicating with the opening of the second supporting body in the substrate before or after attaching the second supporting body, forming an insulating film within the through hole, and filling a conductor into the through hole of the substrate.
Public/Granted literature
- US20080258267A1 Method of Producing Semiconductor Device and Semiconductor Device Public/Granted day:2008-10-23
Information query
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